MODULE PM30CSJ060 PM20CSJ060 20A 30A 600V for MITSUBISHI

Description

PM30CSJ060 PM20CSJ060 20A 30A 600V
model:
PM30CSJ060
PM20CSJ060
★ IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and also There are two advantages of high input impedance of MOSFET and low on-voltage drop of GTR. The saturation voltage of GTR is reduced, the current carrying density is large, but the driving current is large: the MOSFET driving power is very small, the switching speed is flashing, but the turn-on voltage drop is large, and the current carrying density is small. IGBT combines the advantages of the above two devices, the driving power is small and the saturation voltage is reduced. It is very suitable to be used in the converter system with DC voltage of 600V and above, such as AC motor, inverter, switching power supply, lighting circuit, traction drive and other fields.
Quantity: 1pc
Warranty: 120 days